Si and N dangling bond creation in silicon nitride thin filmsWARREN, W. L; ROBERTSON, J; KANICKI, J et al.Applied physics letters. 1993, Vol 63, Num 19, pp 2685-2687, issn 0003-6951Article

Fundamental differences between thick and thin oxides subjected to high electric fieldsWARREN, W. L; LENAHAN, P. M.Journal of applied physics. 1987, Vol 62, Num 10, pp 4305-4308, issn 0021-8979Article

Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin filmsWARREN, W. L; LENAHAN, P. M; KANICKI, J et al.Journal of applied physics. 1991, Vol 70, Num 4, pp 2220-2225, issn 0021-8979Article

Electron spin resonance study of high field stressing in metal-oxide-silicon device oxidesWARREN, W. L; LENAHAN, P. M.Applied physics letters. 1986, Vol 49, Num 19, pp 1296-1298, issn 0003-6951Article

Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitrideWARREN, W. L; LENAHAN, P. M.Physical review. B, Condensed matter. 1990, Vol 42, Num 3, pp 1773-1780, issn 0163-1829, 8 p.Article

Paramagnetic point defects in amorphous thin films of SiO₂ and Si₃N₄ : updates and additionsPOINDEXTER, E. H; WARREN, W. L.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2508-2516, issn 0013-4651Article

Photodarkening and paramagnetism in ultraviolet exposed lead lanthanum zirconate ceramicsSEAGER, C. H; WARREN, W. L.Journal of applied physics. 1993, Vol 73, Num 11, pp 7720-7729, issn 0021-8979, 1Article

²⁹Si hyperfine spectra and structure of E' dangling-bond defects in plasma-enhanced chemical-vapor deposited silicon dioxide films on siliconWARREN, W. L; LENAHAN, P. M.Journal of applied physics. 1989, Vol 66, Num 11, pp 5488-5491, issn 0021-8979Article

Electronic and ionic trapping at domain walls in BaTiO₃WARREN, W. L; DIMOS, D; TUTTLE, B. A et al.Journal of the American Ceramic Society. 1994, Vol 77, Num 10, pp 2753-2757, issn 0002-7820Article

Airborne aerosol inlet passing efficiency measurmentHUEBERT, B. J; LEE, G; WARREN, W. L et al.JGR. Journal of geophysical research. Part D, Atmospheres. 1990, Vol 95, Num 10, pp 16.369-16.381Article

A study of proton generation in Si/SiO₂/Si structuresGIRAULT, V; DEVINE, R. A. B; WARREN, W. L et al.Microelectronic engineering. 1999, Vol 48, Num 1-4, pp 167-170, issn 0167-9317Conference Paper

Reactions and diffusion during annealing-induced H⁺ generation in SOI buried oxidesVANHEUSDEN, K; FLEETWOOD, D. M; DEVINE, R. A. B et al.Microelectronic engineering. 1999, Vol 48, Num 1-4, pp 363-366, issn 0167-9317Conference Paper

Association of genes within the major histocompatibility complex with attention deficit hyperactivity disorderODELL, J. D; WARREN, R. P; WARREN, W. L et al.Neuropsychobiology. 1997, Vol 35, Num 4, pp 181-186, issn 0302-282XArticle

A comparative study on structural and electronic properties of PECVD a-SiO_x with a-SiN_xMAEDA, K; SAKAMOTO, N; UMEZU, I et al.Journal of non-crystalline solids. 1995, Vol 187, pp 287-290, issn 0022-3093Conference Paper

A synchrotron Si2p and As3d core level study of the As-terminated Si(0 0 1) surface oxidationPONCEY, C; ROCHET, F; DUFOUR, G et al.Journal of non-crystalline solids. 1995, Vol 187, pp 40-44, issn 0022-3093Conference Paper

Comparison of X-ray-induced electron and hole trapping in various materials (YSZ, SIMOX, thermal SiO₂)PAILLET, P; GONON, P; SCHWEBEL, C et al.Journal of non-crystalline solids. 1995, Vol 187, pp 170-174, issn 0022-3093Conference Paper

Damage induced by carrier injection in 8 nm thick oxides and nitrided oxidesBRAVAIX, A; VUILLAUME, D; THIRION, V et al.Journal of non-crystalline solids. 1995, Vol 187, pp 365-368, issn 0022-3093Conference Paper

Dielectrics in microelectronics : problems and perspectivesBALK, P.Journal of non-crystalline solids. 1995, Vol 187, pp 1-9, issn 0022-3093Conference Paper

Effects of plasma treatment on the properties of room-temperature liquid-phase deposited (LPD) oxide filmsCHING-FA YEH; SHYUE-SHYH LIN.Journal of non-crystalline solids. 1995, Vol 187, pp 81-85, issn 0022-3093Conference Paper

Influence of FN electron injections in dry and dry/wet/dry gate oxides : relation with failureCIANTAR, E; BOIVIN, P; BURLE, M et al.Journal of non-crystalline solids. 1995, Vol 187, pp 144-148, issn 0022-3093Conference Paper

Nature of the Si and N dangling bonds in silicon nitrideROBERTSON, J; WARREN, W. L; KANICKI, J et al.Journal of non-crystalline solids. 1995, Vol 187, pp 297-300, issn 0022-3093Conference Paper

Optical properties of sol-gel derived ferroelectric filmsBERTOLOTTI, M; MURA, S; PENNELLA, E et al.Journal of non-crystalline solids. 1995, Vol 187, pp 453-456, issn 0022-3093Conference Paper

RTP : temperature monitoring by means of oxidationZÖLLNER, J.-P; CIMALLA, V; PEZOLDT, J et al.Journal of non-crystalline solids. 1995, Vol 187, pp 23-28, issn 0022-3093Conference Paper

Structural and electrical properties of thin SiO₂ layers grown by RTP in a mixture of N₂O and O₂BAUER, A. J; BURTE, E. P.Journal of non-crystalline solids. 1995, Vol 187, pp 361-364, issn 0022-3093Conference Paper

The effect of hydrogen and temperature on the optical gaps of silicon nitride and comparative stoichiometry studies on SiN thin filmsPETALAS, J; LOGOTHETIDIS, S; BOULTADAKIS, S et al.Journal of non-crystalline solids. 1995, Vol 187, pp 291-296, issn 0022-3093Conference Paper